2018-080 – Ultra-low Noise Field-effect Transistors for Use in Chemical/Biological Sensors

Researchers from Kansas State University and Purdue University have fabricated 2D Field Effect Transistors (2D-FETs) of square micrometer area and sub-10 nanometer thickness that can be used as ultra-low noise and high-performance electronic sensors. To the best of our knowledge, this invention reports the lowest noise, the highest mobility and the lowest contact resistance simultaneously. Together, these three attributes have the ability to make these devices among the most reliable micro/nano-scale 2D-FETs in the industry. Such optimized devices are key to achieving a number of applications such as high performance and reliable nano-switches, chemical sensors and biosensors. Additionally, these FETs are meant to enhance existing biosensors by helping them detect low concentrations of biomarkers more accurately, and hence, they are quite suited for applications in the chemical sensor and biosensor industries. Aarushi Gupta-Sheth aarushi@ksu.edu 785-532-3907

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