2021-016 – Complementary Metal Oxide Semiconductor- (CMOS-) compatible Germanium Tin Infrared Camera

Visible imaging sensors detect light using silicon (Si), which is the major material responsible for granting such cheap and prolific computers and other electronic devices. Infrared imaging currently requires exotic elements such as Indium, Arsenic, and Mercury, which are more expensive to process into final imagers and cameras. A Germanium-Tin (GeSn) alloy is one promising solution to amalgamate infrared imaging into a low-cost platform. Problem Addressed by Invention: It is highly desirable to develop an alternative material featuring lower cost and higher temperature operation for pixels of IR cameras. Technology Ventures ventures@uark.edu 479-575-7243

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