2021-078 – Bound charge engineering

This invention provides an oxide configuration for field-effect transistors that simultaneously enables high gate control and short depletion lengths at source-channel and channel-drain interfaces. In this configuration, high-permittivity and low-permittivity oxides are used in conjunction. One envisioned application is a tunnel field-effect transistor with high on-state current and low subthreshold swing. Timothy Corkery chris.corkery@mcgill.ca 514-290-6489

Related Blog

Smart, interactive desk

Get ready to take your space management game to the next level with the University of Glasgow’s innovative project! By combining the

Mechanical Hamstring™

University of Delaware Technology Overview This device was created to allow athletes who suffer a hamstring strain to return to the field

Join Our Newsletter

                                                   Receive Innovation Updates, New Listing Highlights And More