Achieving “Active P-Type Layer/Layers” In III-Nitride Epitaxial Or Device Structures Having Buried P-Type Layers

Researchers at the University of California, Santa Barbara have created both surface and buried p-type regions without the need for doping the materials with an acceptor. Sherylle Mills Englander englander@tia.ucsb.edu 805-893-5196

October 17, 2017

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Achieving “Active P-Type Layer/Layers” In III-Nitride Epitaxial Or Device Structures Having Buried P-Type Layers

Related Blog

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Mechanical Hamstring™

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