C2004-29 – Achieving ultrahigh recording density by use of multi-stable vortex states in ferroelectric nanostructures.

Technology # 04-29 (related to technology 09-18 ) Use of Nanodots of Ferroelectric Material to Store Information (FerroElectric Memory) This is a new invention that will revolutionize the data-storage capability of ferroelectric random accessed memory (FRAM) by a dramatic and unprecedented increase up to a record high of 80 Terabits/inch2, which is five orders of magnitude large than those currently available. The approach is to use our newly-discovered multiple degenerate states formed by ordered toroid moment in low-dimensional nano-scale ferroelectric structures, For instance, at low temperature, ferroelectric nanodisks of lead zirconium titanate (PZT) exhibit two robust bi-stable states with clockwise or counterclockwise concentric vortex rings, and these states with opposite toroid moments can be used as the logic states to store “O” and “1’7 in memory devices. This approach is drastically different from—and more superior than—-the conventional approach where macroscopic polarization is used. In fact, macroscopic polarization does not exist in the nanodisks and thus can not be utilized for the purpose of memory devices. The minimum size (i.e., the diameter) of the nanodisks that display bi-stable toroid moment in PZT is discovered to be 2.8nm, demonstrating that the ultimate storage density of our invented new app oach will be 80 Terabits/inch2. This far exceeds the current storage capability of IGbits/inch2 using magnetic recording. This invention is available for licensing. For interested parties seeking further information, feel free to contact: Mark Allen Lanoue Technology Manager / Tech Ventures University of Arkansas (479) 575-7243 malanoue@uark.edu Technology Ventures ventures@uark.edu 479-575-7243

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