C2009-18 – Asymmetric Ferroelectric and Magnetic Rings to Easy Recording Controllable Vortex Dipole Structures

Technology # 09-18 ULTRA HIGH NON-VOLATILE FERROELECTRIC RANDOM ACCESS MEMORY The use of the asymmetrical ultrathin nanoscale ferroelectric or mesoscale magnetic rings allows the application of an homogeneous field to redirect the dipole vortex so to save this dipole structure further in this nonvolatile memory device. This approach is an efficient solution, which technology has been looking so far, as the effective writing procedure allows the use of simple devices like electromagnet (for magnets) or electric battery (for ferroelectrics) to accomplish the desired control of the dipole vortices. The advantage of the ferroelectric memory devices operated with the help of this invention is a possible extremely high density of the memory elements reachable because of the extremely small size of the ferroelectric nanoring possessing the desired dipole structure. The minimal size Of One memory element is of 4 nm. The elements do not produce any field around that solves the problem of the influence Of one memory element on another one. This invention is available for license. For interested parties seeking further information, feel free to contact: Mark Allen Lanoue Technology Manager / Tech Ventures University of Arkansas (479) 575-7243 malanoue@uark.edu Technology Ventures ventures@uark.edu 479-575-7243

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