C2019-27 – An Intelligent Multi-Level Voltage Gate Driving System for Semiconductor Power Devices

Technology # 19-27 This invention enables the use of high-voltage Silicon Carbide (SiC) power MOSFETs. These devices provide various benefits such as high blocking voltages, high temperature operation, high frequency operation and low conduction and switching losses. However, with their fast switching transients come various challenges that can be detrimental to the device or system. Thus, this active gate driving system is used to provide a great level of control over the slew rates of the device. The voltage level can be optimized by the user to reduce slew rates without increasing the energy losses and the total turn-off duration by too much. This implementation in a simple voltage buffer topology also removes the need to physically alter the circuit, such as the gate resistor method. That method is time-consuming and is not able to be controlled online. The voltage levels for this driver can be controlled digitally, so that feedback information may be given to the main controller to develop an optimal voltage level and duration for any operating mode. Technology Ventures ventures@uark.edu 479-575-7243

Related Blog

Smart, interactive desk

Get ready to take your space management game to the next level with the University of Glasgow’s innovative project! By combining the

Mechanical Hamstring™

University of Delaware Technology Overview This device was created to allow athletes who suffer a hamstring strain to return to the field

Join Our Newsletter

                                                   Receive Innovation Updates, New Listing Highlights And More