C2020-59 – Quantum Structure Getter for Radiation Hardened Transistors

Explanation of Claimed Invention The invention is the design for a radiation hardened transistor through the incorporation of a quantum structure getter (QSG). The novel quantum structure getter significantly reduces charge reaching the active region of the field effect transistor (FET), minimizing effects such as gate voltage shifting. Problem Addressed by Claimed Invention Single event interupts and dose rate burnouts possess the potential to cause disruptions and failures in the operation of microelectronic devices in space and other strategic environments. Technology Ventures ventures@uark.edu 479-575-7243

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