Gating using Na3Bi Dirac semimetals thin films on an electrical insulator such as as Al2O3 2016-012

A method of forming a topological Dirac semimetal layer on a substrate in which a topological transistor is switched from conventional insulator to topological insulator via an electric field with a tuneable bandgap. The new system aims for a ten-fold improvement in energy efficiency. Download:Non Confidential Summary Angeline Bartholomeusz angeline.bartholomeusz@monash.edu +61399059910

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