Heterogeneous Composite Semiconductor Structures For Enhanced Oxide And Air Aperture Formation

Oxide and air apertures can enhance the performance of semiconductor lasers and detectors. However, in material systems that do not accommodate epitaxial incorporation of highly oxidizing materials of sufficient thicknesses, such apertures are difficult to implement. This is specifically the case in AlGaInAsP systems. In these situations, the materials’ slow oxidation rates and/or limited thicknesses restrict their use as optical and/or current apertures. University of California, Santa Barbara Office of Technology & Industry Alliances dobis@tia.ucsb.edu 805-893-2073

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