Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates

A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates that uses an inert carrier gas such as N2. University of California, Santa Barbara Office of Technology & Industry Alliances dobis@tia.ucsb.edu 805-893-2073

March 28, 2017

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Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates

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