New Structure and Technology for Power Semiconductor Devices

Problem: Current nitride-based transistors suffer from buffer leakage current and low performance of the normally-off nitride-based transistors. Technology: This invention describes a new nitride-based transistor which has a 3-D trench structure between the Source and Drain contacts and a conductive electrode covering at least some portions of the top and sidewalls of the 3D trenches. High performance normally-off nitride transistors can be fabricated with the combination of the trench-structure and a normally-off gate region. Christopher Noble crn@mit.edu