Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping

A new method to improve performance of group-III nitride devices by limiting the strain-relaxation on crystal substrates to prevent lattice plane slip. University of California, Santa Barbara Office of Technology & Industry Alliances dobis@tia.ucsb.edu 805-893-2073

March 28, 2017

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Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping

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