Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping

A new method to improve performance of group-III nitride devices by limiting the strain-relaxation on crystal substrates to prevent lattice plane slip. University of California, Santa Barbara Office of Technology & Industry Alliances 805-893-2073

Related Blog

Smart, interactive desk

Get ready to take your space management game to the next level with the University of Glasgow’s innovative project! By combining the

Mechanical Hamstring™

University of Delaware Technology Overview This device was created to allow athletes who suffer a hamstring strain to return to the field

Join Our Newsletter

                                                   Receive Innovation Updates, New Listing Highlights And More