UIC-2014-055 – Power Switching Technology for High Breakdown Voltages

Currently, the biggest problem with InAlN/GaN devices is their low breakdown voltages, which is typically less than 200V. This is not suitable for a many applications such as power switches in smart grids, or hybrid electric cars. Inventors at UIC have proposed a novel approach to make the breakdown voltage of InAlN/GaN much higher than 1000V, rendering this kind of device very promising for next generation applications. This work will make possible any commercial production of power switches based on InAlN/GaN materials, which are much more effective than conventional AlGaN/GaN switches. InAlN/GaN can offer higher current carrying capabilities and greater resilience to current collapse due to the high Aluminum percentage in the barrier layer, and reduced strain in the epitaxial structure. Mark Krivchenia krivchen@otm.uic.edu (312) 996-6626

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